Ultraviolet All-Optical Switching via Zinc Oxide Thin Films
DOI:
https://doi.org/10.17307/wsc.v1i1.284Schlagworte:
All-Optical Switching, Zinc Oxide, Thin FilmsAbstract
Zinc oxide (ZnO) is a semiconductor material exhibiting a wide bandgap in the ultraviolet (UV) region. ZnO is a promising material for use in short-wave optoelectronic devices such as all-optical switches (AOSs). Our switch is composed of a polycrystalline ZnO thin film grown by DC sputter deposition and uses a 120ps control pulse tuned to the band edge of the film to modify the transmission of a weaker signal pulse. The signal light is heavily absorbed in the absence of the control pulse, representing an off state of the switch. The control pulse, when incident on the film, resonantly excites electrons to create excitons. This decreases the material’s absorption by filling energy states and screening the built-in electric field of the ZnO. Consequently, more signal light is transmitted by the film, representing an on state.
Literaturhinweise
Chaisakul P, Marris-Morini D, Isella G, Chrastina D, Le Roux X, Gatti E, Edmond S, Osmond J, Cassan E, and Vivien L. (2010) “Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures,” Opt. Lett. 35, 2913.
Chaisakul P, Marris-Morini D, Rouified MS, Isella G, Chrastina D, Frigerio J, Le Roux X, Edmond S, Coudevylle JR, and Vivien L. (2012) “23 GHz Ge/SiGe multiple quantum well electro-absorption modulator,” Opt. Exp. 20, 3219.
Chemla, DS, and Miller, DAB. (1985) “Room-temperature excitonic nonlinearoptical effects in semiconductor quantum-well structures.” Journal of the Optical Society of America B 2, 1155.
Goossen KW Cunningham JE, and Jan WY. (1994) “Electroabsorption in ultranarrow-barrier GaAs/AlGaAs multiple-quantum-well modulators,” Appl. Phys. Lett., 64, 1071.
Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DAB, and Harris JS. (2005) “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334.
Lever L, Hu Y, Myronov M, Liu X, Owens N, Gardes FY, Marko IP, Sweeney SJ, Ikonic Z, Leadley DR, Reed GT, and Kelsall RW. (2011) “Modulation of the absorption coefficient at 1.3 mm in Ge/SiGe multiple quantum well heterostructures on silicon,” Opt. Lett. 36, 4158.
Livescu G, Miller DAB, Sizer T, Burrows DJ, Cunningham JE, Gossard AC, and English JH. (1989) “High-speed absorption recovery in quantum well diodes by diffusive electrical-conduction.” Applied Physics Letters 54, 748.
Mahgerefteh D, Yang CM, Chen L, Hu KZ, Chen W, Garmire E, and Madhukar A. (1992) “Picosecond time-resolved measurements of electroabsorption in an InGaAs/GaAs multiple quantum-well p-i-n modulator.” Applied Physics Letters 61, 2592.
McCallum DS, Cartwright AN, Huang XR, Boggess TF, Smirl AL, and Hasenberg TC. (1993) “Enhanced ambipolar inplane transport in an InAs/GaAs hetero-n-i-p-i.” Journal of Applied Physics 73, 3860.
Miller DAB, Chemla DS, Damen TC, Gossard AC, Wiegmann W, Wood TH, and Burrus CA. (1985) “Electric-field dependence of optical-absorption near the band-gap of quantum-well structures.” Physical Review B 32, 1043.
NASA Aeronautics Research Mission Directorate. (2014) “Achieving Our Vision: A New Approach for FY15,” www.nasa.gov, NASA FY 2015 Budget Request Fact Sheets.
Sato K, Abe T, Fujinuma R, Yasuda K, Yamaguchi T, Kasada H, and Ando K. (2012) “Stark effects of ZnO thin films and ZnO/ZnMgO quantum wells,” Phys. Status Solidi C 9, 1801.
Xu Z, Chen G, Abou-Galala F, and Leonardi M. (2007) “Experimental performance evaluation of non-line-of-sight ultraviolet communication systems,” Proc. of SPIE 6709, 67090.
Yairi MB, Coldren CW, Miller DAB, and Harris JS. (1999) “High-speed, optically controlled surface-normal optical switch based on diffusive conduction.” Applied Physics Letters 75, 597.
Zhang XY, Dhawan A, Wellenius P, Suresh A, and Muth JF. (2007) “Planar ZnO ultraviolet modulator,” Appl. Phys. Lett. 91, 071107.
Downloads
Veröffentlicht
Zitationsvorschlag
Ausgabe
Rubrik
Lizenz
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
