Thick-Film ZnO Semiconducting Structures via Direct Ink Write Printing

Rayne Wolf

Authors

Rayne Wolf University of Wisconsin - Madison

Abstract

To support future human presence on the Moon and Mars it is essential for astronauts to have the capability to manufacture electronic devices in space. The first step in realizing this goal is to develop semiconducting materials that are capable of being used in a flexible manufacturing process. ZnO is explored for its ability to be used as an ink for Direct Ink Write (DIW) printing and for its functionality as a semiconducting layer in a resistive random-access memory (RRAM) device. The sintering conditions required for functionality are explored and a switching RRAM device is fabricated using a commercial silver ink and the optimal sintering conditions. The functional device requires a low sintering temperature for a long period of time using a low ramp rate to avoid microcracking between the silver electrodes. Finally, switching behavior is exhibited with a forming voltage of 3.2V (V_form), a set voltage of 2.75V (V_set), and a reset voltage of 2.25V (V_reset) showing promising RRAM capabilities.

Author Biography

Rayne Wolf, University of Wisconsin - Madison

Rayne Wolf is a first year Ph.D. student with the Department of Industrial and Systems Engineering at the University of Wisconsin - Madison. She received her B.S. in Industrial Engineering at UW-Madison in 2022 with an emphasis on manufacturing technologies. Her research focuses on machine vision and learning for process control of additive manufacturing. More specifically, electrohydrodynamic, direct-ink write, and inkjet printing technologies for flexible electronics in-space. She is currently collaborating with NASA to create stable process control of an ISS demonstration for 3D printed semiconductors. Rayne is an NSF, NASA, and WSGC fellowship recipient.

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Thick-Film ZnO Semiconducting Structures via Direct Ink Write Printing

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Rayne Wolf, University of Wisconsin - Madison

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